NVMTS1D5N08H

MOSFET - Power, Single N-Channel, 80 V, 1.4 mΩ, 273 A

NVMTS1D5N08H Features ? Small Footprint (8x8 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain?to?Source Voltage VDSS 80 V Gate?to?Source Voltage VGS ±20 V Continuous Drain Current RJC (Notes 1, 3) Steady State TC = 25°C ID 273 A TC = 100°C 193 Power Dissipation RJC (Note 1) TC = 25°C PD 258 W TC = 100°C 129 Continuous Drain Current RJA (Notes 1, 2, 3) Steady State TA = 25°C ID 38 A TA = 100°C 27 Power Dissipation RJA (Notes 1, 2) TA = 25°C PD 5.0 W TA = 100°C 2.5 Pulsed Drain Current TA = 25°C, tp = 10 s IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg ?55 to +175 °C Source Current (Body Diode) IS 215 A Single Pulse Drain?to?Source Avalanche Energy (IL(pk) = 24 A) EAS 1973 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

• Switching Power Supplies
• Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
• 48V systems